To use these charts, locate the material for which known conditions are available. Then multiply the rate by the relative factors to arrive at the estimated rate for the new material. For example, with previous data showing 3.5A/s aluminum at l00W, then titanium at similar conditions will generate approximately (0.53/1.00) &#; 3.5 Å/s &#; 2 Å/s.
For more information, please visit Acetron.
The rates in this table are calculated based on a 500V cathode potential. As the power is increased greater than two times the original rate, the relative rate will drop slightly (up to 10%). For example, aluminum at 250W.
Al250W = 0.9 &#; AI100W &#; (P1/P0)
0.9 &#; 3.5 Å/s &#; (250/100) &#; 7.4 Å/s
The rates in the ceramics table assume the use of an RF power supply and account for the partial duty cycle of the RF generator as compared to a DC supply. A pulsed DC supply will yield slightly higher effective rates.
The magnetic materials table shows the rate for DC operation with a new target. As the magnetic target erodes, the influence of the remaining material on the magnetic confinement field will change, leading to variations in sputter rate, operation voltage, and ignition pressure.
This information is for general planning purposes only. The Kurt J. Lesker Company makes no guarantees of the correctness of these numbers in your process. Contact the Kurt J. Lesker Company for specific assistance in setting up your process.
NON-MAGNETIC MATERIALS* Material Name Rate Ag Silver 2.88 Al Aluminum 1.00 Au Gold 1.74 Be Beryllium 0.21 C Carbon 0.23 Cu Copper 1.42 GaAs Gallium Arsenide {100} 1.03 GaAs Gallium Arsenide {110} 1.03 Ge Germanium 1.50 Mo Molybdenum 0.66 Nb Niobium 0.76 Pd Palladium 1.77 Pt Platinum 1.00 Re Rhenium 0.84 Rh Rhodium 1.16 Ru Ruthenium 0.98 Si Silicon 0.60 Sm Samarium 1.74 Ta Tantalum 0.67 Th Thorium 1.31 Ti Titanium 0.53 V Vanadium 0.50 W Tungsten 0.57 Y Yttrium 1.53 Zr Zirconium 0.88* All rates in this table are relative to aluminum.
OXIDES AND CERAMICS Material Name Rate Al2O3 Alumina 0.05 SiC Silicon Carbide 0.22 SiO2 Silicon Dioxide 0.21 Tac Tantalum Carbide 0.09 Ta2O5 Tantalum Pentoxide 0.39 MAGNETIC MATERIALS Material Name Mag Moment Rate Co Cobalt Low 0.73 Cr Chromium Med 0.87 Fe Iron High 0.57 Mn Manganese Med 0.14 Ni Nickel Low 0.86 Ni80Fe20 Permalloy High 0.80There are a few ways that you can increase/ maximize the sputtering rate of materials;
The company is the world’s best semiconductor sputtering supplier. We are your one-stop shop for all needs. Our staff are highly-specialized and will help you find the product you need.
1. Increase power: While each material will be limited in their max power relative to their material properties, the cooling efficiency will allow you to operate the target at the highest possible power density. The first thing you should do is directly cool the target material by utilizing either a bolt-on style or bonded target configuration. This in addition to the aid of a conductive paste or epoxy will maximize the thermal conductivity and allow you to increase the power density to the maximum level attainable by the target material.
2. Decrease source-substrate distance: The closer the target to the substrate, the higher the sputtering rate will be. Generally, the plasma will be contained within 2" above the target surface. Many sputtering applications utilize a 3"-4" source-substrate distance. Assuming a 4" source-substrate distance, the sputtering rate will fall off by approximately 25% for every inch beyond 4". However, the rate will typically increase by approximately 35% for every inch closer you go from 4" away.
3. Lower operating pressures: In sputtering, the more gas in the chamber, the more atom and ion collisions there will be. These collisions will reduce the rate at which material atoms eject from the target surface and deposit onto the substrate. By reducing the operating gas flow, these collisions will be reduced and will have a positive impact on the ultimate sputtering rates that can be achieved.
4. Increase the number of magnetrons in the chamber: Rates will scale linearly by the number of magnetrons that are added to your application. In production applications with specific yield requirements, once the power and source-substrate parameters have been fully maximized, increasing the number of magnetrons is a parameter that can be utilized to enhance sputtering rates.
Diode Sputtering
In diode sputtering, an electric potential difference is applied between the target and the substrate to form a plasma discharge inside a low vacuum chamber. The free electrons in the plasma are immediately removed from the negative potential electrode (cathode). These accelerating electrons collide with neutral gas atoms (Argon) in their path, causing the electrons in the shell of these atoms to separate. As a result, the gas atoms become positive ions and accelerate towards the cathode, causing the sputtering phenomenon. Glow discharge occurs when some of the positive ions return to their ground state by adsorbing free electrons and releasing photons.
This mechanism is called Diode Sputtering and the applied voltage can be DC (with constant poles) or RF (with alternating poles), depending on the target material. One of the problems with this method is that its coating rate is low and it takes longer to do the coating, which causes the target to heat up and damage its atomic structure, which is improved utilizing Magnetron Cathodes.
Contact us to discuss your requirements of metal sputtering target. Our experienced sales team can help you identify the options that best suit your needs.